総説

極紫外顕微ラマン分光法の開発
- 半導体ナノ表面層の評価 -

Development of Deep Ultraviolet micro-Raman Spectroscopy
−Characterization of nanosurface in semiconductors−

中島 信一・三谷 武志・奥村 　元
Shin-ichi NAKASHIMA, Takashi MITANI, and Hajime OKUMURA

Recent advance in instrumentations has provided progress in deep ultraviolet (DUV) Raman spectroscopy. This technique has enabled to characterize thin surface layers of wide gap semiconductors, because the penetration depth of the DUV light is very shallow for these materials. We have briefly reviewed present status of the DUV Raman spectroscopy and its application to studies of inorganic and organic materials. Results of the DUV Raman characterization of surfaces and damage in nano-scaled surface layers which is induced by processing for device fabrication are also described.

Keywords:Deep UV Raman spectroscopy, Raman microscope, Characterization, Widegap semiconductors, Nanosurface, Ion implantation, Mechanical polishing, Surface polarity